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TYPICAL PERFORMANCE CURVES (R)
APT200GN60JDQ4 600V
APT200GN60JDQ4
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses
E G C
E
S
OT
22
7
* * * * *
* 600V Field Stop
ISOTOP (R)
"UL Recognized"
file # E145592
Trench Gate: Low VCE(on) Easy Paralleling 5s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability 175C Rated
C G E
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT200GN60JDQ4 UNIT Volts
600 20 283 158 600 600A @600V 682 -55 to 175
Amps
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25C) MIN TYP MAX UNIT
600 5 1.05 5.8 1.45 1.65 1.15 1.19 50
2
6.5 1.85
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 25C) VCE(ON) Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 125C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125C) I CES I GES RGINT Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
A nA
3-2005 050-7611 Rev B
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
TBD 600 2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT200GN60JDQ4
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 100A TJ = 175C, R G = 1.0
7,
MIN
TYP
MAX
UNIT pF V nC
14100 4610 4000 8.2 1180 85 660
VGE =
VGE = 15V
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H, VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 1.0 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 200A
600 5 50 80 560 100 13 15 11 50 80 620 70 14 16 10
A
s
ns
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
mJ
Inductive Switching (125C) VCC =400V VGE = 15V I C = 200A
ns
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 1.0 7
mJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC VIsolation WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Package Weight
Wavefom from Terminals to Mounting Base for 1 Min.)
MIN
TYP
MAX
UNIT C/W Volts
.22 .33 2500 1.03 29.2 10 1.1
oz gm Ib*in N*m
Torque
1
Maximum Terminal & Mounting Torque
Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3-2005 Rev B 050-7611
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
400 350 IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
V
GE
= 15V
400 350 IC, COLLECTOR CURRENT (A) 300 250
APT200GN60JDQ4
15V 13V
TJ = -55C TJ = 25C TJ = 125C
12V
TJ = 175C
9V
200 150 100 50 0
8.5V 8V
7.5V 7V
400 350 300 250 200 150 100
FIGURE 1, Output Characteristics(TJ = 25C) TJ = -55C TJ = 25C TJ = 125C
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 200A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VCE = 120V VCE = 300V
8 6 4 2 0 0 200
VCE = 480V
50 0 0
TJ = 175C
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
400 600 800 1000 1200 1400 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0 2.5 2.0
IC = 300A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
3.0 2.5 2.0
IC = 300A IC = 150A
IC = 150A
1.5 1.0 0.5 0
1.5 1.0 0.5 0
IC = 75A
IC = 75A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
8
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 400
0
1.05 1.00 0.95 0.90 0.85 0.80 0.75
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10
350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25 3-2005 050-7611 Rev B
0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
60 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 50 40 30 20 10 T = 25C, or 125C J
VCE = 400V RG = 1.0 L = 100H
800 VGE = 15V 700 600 500 400 300 200
V = 400V 100 RCE= 1.0 G VGE =15V,TJ=125C
APT200GN60JDQ4
VGE =15V,TJ=25C
120 160 200 240 280 320 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 40
180 160 140 tr, RISE TIME (ns) 120 100 80 60 40 20
RG = 1.0, L = 100H, VCE = 400V
0
120 160 200 240 280 320 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 40
250
0
L = 100H
200 tf, FALL TIME (ns)
TJ = 25 or 125C,VGE = 15V
150
TJ = 25C, VGE = 15V
100
50
TJ = 125C, VGE = 15V
80 120 160 200 240 280 320 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 40
35,000 EON2, TURN ON ENERGY LOSS (J) 30,000 25,000 20,000 15,000 10,000 5,000 0
TJ = 25C
0
80 120 160 200 240 280 320 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 40
25,000 EOFF, TURN OFF ENERGY LOSS (J)
= 400V V CE = +15V V GE R = 1.0
G
0
RG = 1.0, L = 100H, VCE = 400V
= 400V V CE = +15V V GE R = 1.0
G
TJ = 125C
20,000
TJ = 125C
15,000
10,000
5,000
TJ = 25C
80 120 160 200 240 280 320 40 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
70,000 SWITCHING ENERGY LOSSES (J) 60,000 50,000 40,000 30,000 20,000
Eoff,100A Eon2,200A Eon2,300A Eoff,200A
= 400V V CE = +15V V GE T = 125C
J
80 120 160 200 240 280 320 40 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
35,000 SWITCHING ENERGY LOSSES (J) 30,000
= 400V V CE = +15V V GE R = 1.0
G
0
Eoff,300A
Eon2,300A
25,000 Eoff,300A 20,000 15,000 10,000 5,000 0
Eoff,100A Eoff,200A Eon2,100A Eon2,200A
3-2005
Rev B
10,000
050-7611
20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
0
Eon2,100A
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
TYPICAL PERFORMANCE CURVES
20,000 10,000 C, CAPACITANCE ( F) 5000 Cies IC, COLLECTOR CURRENT (A)
700 600 500 400 300 200 100
APT200GN60JDQ4
P
1000 500 C0es Cres 100
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.25
ZJC, THERMAL IMPEDANCE (C/W)
0.20
D = 0.9 0.7
0.15
0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
60 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C)
RC MODEL
0.0463
0.0120
10
Power (watts)
0.132
0.483
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 400V CE R = 1.0
G
F
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
0.0414 Case temperature. (C)
8.30
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
40
60
050-7611
Rev B
3-2005
APT200GN60JDQ4
APT100DQ60
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
tr Collector Current 90% 5% 10% 5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage
TJ = 125C
td(off) Collector Current tf 10% Collector Voltage
Switching Energy
90%
0
Figure 23, Turn-off Switching Waveforms and Definitions
050-7611
Rev B
3-2005
TYPICAL PERFORMANCE CURVES
APT200GN60JDQ4
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 108C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 200A Forward Voltage IF = 400A IF = 200A, TJ = 125C Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.35 , THERMAL IMPEDANCE (C/W) 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 10-5 0.3 0.1 0.05 0.05 10-4
Note:
All Ratings: TC = 25C unless otherwise specified.
APT200GN60LDQ4 UNIT Amps
100 156 1000
MIN TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.0 2.6 1.67
MIN TYP 34 MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 100A, diF/dt = -200A/s VR = 400V, TC = 25C
IF = 100A, diF/dt = -200A/s VR = 400V, TC = 125C
160 290 5 220 1530 13 100 2890 44 -
Amps ns nC Amps ns nC Amps
-
IF = 100A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
D = 0.9
0.7
PDM
t1 t2
JC
SINGLE PULSE SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
Z
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C)
Case temperature (C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7611
0.0743
5.17
Rev B
Power (watts)
0.188
0.361
3-2005
0.0673
0.0182
300 250 IF, FORWARD CURRENT (A) 200 TJ = 175C 150 100 50 TJ = -55C 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage
T =125C J V =400V
R
300
trr, REVERSE RECOVERY TIME (ns) TJ = 25C
APT200GN60JDQ4
T =125C J V =400V
R
250 200 150 100 50 0
200A 100A 50A
TJ = 125C
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change
4000 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0 50A 100A 200A
60
T =125C J V =400V
50 40 30 20 10 0
R
200A
100A 50A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 180 160 140 120
Duty cycle = 0.5 T =175C
J
1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 0.2 0.0 trr IRRM Qrr
Qrr trr
IF(AV) (A)
100 80 60 40 20
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
1400 CJ, JUNCTION CAPACITANCE (pF) 1200 1000 800 600 400 200
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
Rev B
3-2005
0
1
050-7611
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT60M75L2LL
APT200GN60JDQ4
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
11.8 (.463) 12.2 (.480) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7611
Rev B
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
3-2005
* Emitter/Anode
Collector/Cathode

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